Procurement Summary
State: Karnataka
Summary: Igbt (Insulated Gate Bipolar Transistor)
Deadline: 26 May 2026
Posting Date: 08 May 2026
Other Information
Notice Type: Tender
TOT Ref.No.: 140889094
Document Ref. No.: P2265376
Financier: Self Financed
Purchaser Ownership: Public
Document Fees: Refer Document
Tender Value: Refer Document
EMD: Refer Document
Purchaser's Detail
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Login to see detailsTender Details
IGBT (Insulated Gate Bipolar Transistor) is a three-terminal semiconductor device (Gate, Collector, Emitter) that combines the high-speed switching of a MOSFET with the low saturation voltage of a Bipolar Junction Transistor (BJT). Specifications: (1) Model No:FF1400R17IP4 (2) Voltage : 1700 V (3) Curren t :1400 A (4) Repetitive Peak Collector Current : 2800 A (5) Collector-Emitter Saturation Voltage : 1.75 V to 2.2V @ 1400A, 15V (6) Gate-Emitter Peak Voltage :20 V (7) Module Type: Half-bridge (Dual switch). (8) Ope rating Temperature: -40 to 150 ?C. (9) Internal Gate Resistor: 1.6 ohm. (10) Series/Package: Prime PAC 3. Make: Infineon, Mitsubishi, Semikron, ABB. [ Warranty Period: 12 Months after the date of delivery ] ]
Contract Category: Expenditure
Contract Type : Goods
Tender Type : Open - Indigenous
Contract Category : Expenditure
Evaluation Criteria : Itemwise/Consigneewise
Bidding System : Single Packet
Pre-Bid Conference Required : No
Pre-Bid Conference Date Time : Not Applicable
Tendering Section : P 2
Inspection Agency : CONSIGNEE
Publishing Date / Time : 07/05/2026 14:23 Item Category General
Procure From Approved Sources : No
Approving Agency : Not Applicable
Closing Date Time : 26/05/2026 14:00
Validity of Offer ( Days) : 90
Ranking Order for Bids : Lowest to Highest
Advertised Value :
Tender Doc. Cost (INR) : 0.00
Earnest Money (INR) : 0.00
Consignee
SSE ELECL. WHEEL CONTROL,
RWF
Karnataka 4.00 Numbers
Documents
Tender Notice
viewNitPdf_5383434.pdf
5583533.pdf
5359624.pdf
5359666.pdf
5089053.pdf
5359649.pdf
5089049.pdf