Contract notice: Laboratory, optical and precision equipments (excl. glasses) Tender

Procurement Summary

Country : Germany

Summary : Contract notice: Laboratory, optical and precision equipments (excl. glasses)

Deadline : 27 Dec 2019

Other Information

Notice Type : Tender

TOT Ref.No.: 38231332

Document Ref. No. : 553626-2019

Competition : ICB

Financier : Self Financed

Purchaser Ownership : -

Tender Value : Refer Document

Purchaser's Detail

Purchaser : IHP GMBH - LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK
Office Name: IHP GmbH - Leibniz-Institut für innovative Mikroelektronik
Address: Im Technologiepark 25
Town: Frankfurt (Oder)
Postal Code: 15236
Contact Point: Beschaffung

Phone: +49 335-5625-359
Fax: +49 335-5625-25359
Germany
Email :rohner@ihp-microelectronics.com
URL :https://www.ihp-microelectronics.com/en/start.html

Tender Details

Object of the contract
Laboratory, optical and precision equipments (excl. glasses)

Description: Contract notice: Laboratory, optical and precision equipments (excl. glasses)

Authority Type: Other
Contact Nature: Supplies
Procedure: Open procedure
Document: Contract notice
Regulation: European Union
Award criteria: The most economic tender
CPV code: 38000000, 38000000
CPV Description: Laboratory, optical and precision equipments (excluding glasses).

Cluster tool with PECVD and drying chamber

Reference Number: IHP-2019-103

1 cluster tool consisting of transport module with the possibility of installing a total of 6 process chambers for 200 mm wafers; equipped with a chamber for deep Si etching (see point 2) and a PECVD chamber (see point 3); Possibility later4 more chambers to install.

Main Site: IHP GmbH Leibniz Institute for Innovative Microelectronics

1) cluster tool consisting of transport module with the possibility to install a total of 6 process chambers for 200 mm wafer; equipped with a chamber for deep Si etching (see point 2) and a PECVD chamber (see point 3); Possibility to install 4 additional chambers

1.1) 2 load lock chambers with swing-out cassettes for receiving wafer carrier type Entegris KA198-80M-47C02;

1.2) Wafer aligner;

1.3) 4 color alarm tower;

1.4) High resolution TFT monitor;

1.5) Plant operation also in the gray area;

1.6) Suitable for fully automatic high-volume production;

1.7) Application in the field of semiconductor production;

1.8) Installation in cleanroom class 1;

1.9)Power supply 5 / 3L N PE 400V;

1.10) Hardware and process completely controlled by state of the art software;

1.11) For the whole system, the CE conformity must be explained and it must comply with the current EC Machinery Directive.

2 ) Process chamber for dry chemical deep silicon, installed on the above cluster tool (see point 1):

2.1) Carrying out Bosch process; License;

2.2) source plasma source for RF with generator;

2.3) bias plasma source for RF with generator;

2.4) bias plasma source for LF with generator;

2.5) Matching unit for source RF / bias RF;

2.6) Matching unit for source RF / bias LF;

2.7) Turbopump;

2.8) Heatable VAT pendulum valve;

2.9) MFC controlled gas lines designed for Bosch process ;

2.10) Ceramic echuck with H

2.11) Waferless auto clean capability;

2.12) End point system for clean between wafer procedure;

2.13) Optical end point system for process control even at low open area;

2.14) wafer edge protection;

2.15) Process software: gase pulsing and parameter ramping;

2.16) Process specification.

a) General:

- selectivity to the resist approx. 100: 1,

- selectivity to oxide approx. 130: 1,

- no notch when stopped on oxide,

- profile tilt 100 x 100 Muem:

- etching rate 8-10 muem / min,

- profile angle: 89-90 degrees,

- scallops size 3 muem / min,

- profile angle: 89-90 degrees to slightly slanted,

- depth of cut approx. 100 muem.

Depth variation over the wafer better 2%

2.17) Detection process in the context of the evaluation: Performance specification will be met when the specification is fulfilledittelt. Wafers are provided by the IHP;

2.18) After installation of the process chamber Evidence of a process.

3) Process chamber for PECVD installed on the above cluster tool (see point 1):

3.1) MFC controlled gas lines, designed for in Pkt 3.11 described TEOS and nitride deposition;

3.2) Process temperature control system for plates and showerhead;

3.3) Temperature controlled chamber walls;

3.4) Air cooled plates for separation temp. 300 nm / min

10 muem thickness; stress / = 0.2 muem particle;

b) SiH4 based SiN

200 degrees C process dep. Rate 200 nm / min

0.5 muem thickness; stress / = 0.2 Muem particle

N @ 633nm

1.95-2.00

WER in PHO 10 nm / min.

3.12) Evidence process during evaluation: Performance specification will be transmitted upon fulfillment of the specification. Wafer are provided by the IHP;

3.13) After installing the process chamber proof of a process.

4) system general:

4.1) consumable kit;

4.2) spare kit;

4.3) Additional 12 months warranty;

4.4) installation and Commissioning.

See specifications.

- Certification in tax matters.

The AG reserves itself before placing the order, a request with the responsible

The tender documents can be found on the awarding marketplace Brandenburg

http: //vergabemarktplatz.brandenburg.de

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Internet address (URL): https://www.ihp-microelectronics.com/en/start.html

Documents

 Tender Notice