Technology/Business Opportunity Photoconductive Tender - 92838799

Procurement Summary

Country: USA

Summary: Technology/Business Opportunity Photoconductive Semiconducting Switch Laser Diode Drivers

Deadline: 27 Dec 2023

Posting Date: 28 Nov 2023

Other Information

Notice Type: Tender

TOT Ref.No.: 92838799

Document Ref. No.: IL-13804

Competition: ICB

Financier: Self Financed

Purchaser Ownership: Public

Tender Value: Refer Document

Purchaser's Detail

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Tender Details

Description
Opportunity:
Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its photoconductive semiconducting switch laser diode driver.
Background:
A laser diode is a device that is capable of conducting high current in one direction and limited current in the opposite direction. Laser diode drivers supply current and voltage from a single laser diode to multiple laser diodes. The driver also protects the laser from an excess of current. Charging capacitors with fast switching Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are the conventional way to drive laser diodes.
A PhotoConductive Semiconductor Switch (PCSS) operates by applying a direct current (DC) voltage to a semiconductor material and then illuminating the semiconductor with a short laser pulse to generate charge carriers, resulting in a dramatic increase in the conductivity of the semiconductor and a short high current pulse at the output that is then used to drive a load or an antenna.
Description:
LLNL researchers have invented an ultrafast PCSS to drive a high-power laser diode with arbitrary pulse widths. These devices operate by supplying a high voltage (10 kV) to one side of the switch. A short pulse of light illuminates the semiconductor, instantly turning it from highly resistive to highly conductive. Ultrawide bandgap (UWBG) semiconductors are used to achieve sub-100 picosecond pulse widths and extremely high voltage standoff. Dopants would allow for sub-bandgap excitation of charge carriers while maintaining the high voltage standoff.
Advantages/Benefits:
Value Proposition: Improved performance and cost-efficiency over conventional laser diode drivers. Higher output current (30 ...
Active Contract Opportunity Notice ID IL-13804 Related Notice Department/Ind. Agency ENERGY, DEPARTMENT OF Sub-tier ENERGY, DEPARTMENT OF Office LLNS – DOE CONTRACTOR

General Information

Contract Opportunity Type: Special Notice (Original)

All Dates/Times are: (UTC-08:00) PACIFIC STANDARD TIME, LOS ANGELES, USA

Original Published Date: Nov 27, 2023 07:15 am PST

Original Response Date: Dec 27, 2023 08:00 am PST

Inactive Policy: 15 days after response date

Original Inactive Date: Jan 11, 2024

Initiative:

Classification

Original Set Aside:

Product Service Code:

NAICS Code: 334419 - Other Electronic Component Manufacturing
Place of Performance: Livermore, CA USA

Documents

 Tender Notice