Technology/Business Opportunity Methods for Electrically Gating Nanostructures Tender

Procurement Summary

Country : USA

Summary : Technology/Business Opportunity Methods for Electrically Gating Nanostructures

Deadline : 12 Apr 2024

Other Information

Notice Type : Tender

TOT Ref.No.: 98713241

Document Ref. No. : IL-13506

Competition : ICB

Financier : Self Financed

Purchaser Ownership : Public

Tender Value : Refer Document

Purchaser's Detail

Purchaser : ENERGY, DEPARTMENT OF
Contracting Office Address : Livermore, CA 94551
Primary Point of Contact : Jared Lynch
lynch36@llnl.gov
Phone Number 9254226667

Secondary Point of Contact : Charlotte Eng
eng23@llnl.gov
Phone Number 9254221905
USA
Email :lynch36@llnl.gov

Tender Details

Description

Opportunity:

Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its new design principles for integrating into a deposited semiconducting device the ability to apply electric fields to nanotube assembly channels in order to create an electronic gating effect.



Background:

Molecular sensors are important across many industries, including automotive, aerospace, fossil energy, and biomedical (e.g., wearables). Carbon nanotubes (CNTs) have been shown to be particularly promising as molecular sensors because of their high electrical conductivity, thermal and chemical stability, one dimensional form factor, high specific surface area and carbon lattice structure that makes them easy to functionalize. The ability to control and measure the flow of ionic material through CNTs would increase the utility of CNT technologies. This would allow assemblies of nanotubes or other nanostructures to be used as field-effect transistors (FET), electrical sensors, and other devices that rely on electrical current modulation from an externally applied field, or "gate". To maximize sensitivity of a sensing device, it is common to apply a gating voltage to modulate the channel current and maximize the signal gain registered from a detection event. However, gating a thick film comprised of high-surface-area nanostructures or out-of-plane architectures is not possible with typical top-gate and bottom-gate configurations. The electric field may not extend sufficiently or uniformly through the entire ensemble of nanostructures, so their currents will not be modulated as desired.

Existing approaches for gating nanostructured films both non-contact techniques, which involve light probes, as well as contact methods...
Active Contract Opportunity Notice ID IL-13506 Related Notice Department/Ind. Agency ENERGY, DEPARTMENT OF Sub-tier ENERGY, DEPARTMENT OF Office LLNS – DOE CONTRACTOR
General Information
Contract Opportunity Type: Special Notice (Original)
All Dates/Times are: (UTC-07:00) PACIFIC STANDARD TIME, LOS ANGELES, USA
Original Published Date: Mar 12, 2024 09:00 am PDT
Original Response Date: Apr 12, 2024 09:00 am PDT
Inactive Policy: 15 days after response date
Original Inactive Date: Apr 27, 2024
Initiative:
Classification
Original Set Aside:
Product Service Code:
NAICS Code: 334413 - Semiconductor and Related Device Manufacturing

Place of Performance: Livermore, CA USA

Documents

 Tender Notice