Scan Wave 2 Probe Interface module for the Asylum AFM system. Tender, USA - 123679305

Procurement Summary

Country: USA

Summary: Scan Wave 2 Probe Interface module for the Asylum AFM system.

Deadline: 13 Aug 2025

Other Information

Notice Type: Tender

TOT Ref.No.: 123679305

Document Ref. No.: NB643090-25-02337

Financier: Self Financed

Purchaser Ownership: Public

Tender Value: Refer Document

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Tender Details

Description

FBO ANNOUNCEMENT: PRESOLICITATION NOTICE, NOTICE OF INTENT

ACTION CODE: SPECIAL NOTICE

SUBJECT: Sole source - Scan Wave 2 Probe Interface module for the Asylum AFM system.

SOLICITATION NUMBER: NB643090-25-02337

RESPONSE DATE: 8/13/25

DESCRIPTION:

The National Institute of Standards and Technology, Materials Measurement Science Division is engaged in a combination of fundamental research, standards production, and applied science and engineering. This work aims to foster innovation in U.S. industry and meet the measurement science needs of our various agency partners. Among its many projects, this group focuses on developing nanoscale electrical and mechanical measurement methodologies for characterizing material properties. These methodologies are essential for understanding and advancing the fabrication of semiconductor devices. Many of these characterizations are performed on Atomic Force Microscopes (AFM) like an existing Vero AFM (Oxford Instruments Asylum Research). We have an extensive suite of capabilities on this Vero AFM, including nanoscale electric (current, surface potential, capacitance) and mechanical (various elastic and plastic) capabilities. In some projects, we need to add nanoscale impedance characterization to complement our existing characterizations and have a more compelling understanding of the material properties that we measure. This nanoscale impedance will provide measurements of permittivity and conductivity at the nanoscale, also enabling the identification of dopant polarity (n-type or p-type) and quantification of the carrier dopant levels from intrinsic silicon to 1E20 cm^-3, regardless of the type and species of the dopant. The impedance characterization can be combined with other nano-electric and mechanical AFM measurements, offering innovative ways to investigate domains and interfaces with varying conductivity and buried structures, such as SRAM flash memory.

The National Institute of ...
Active Contract Opportunity
Notice ID : NB643090-25-02337
Related Notice
Department/Ind. Agency : COMMERCE, DEPARTMENT OF
Sub-tier : NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
Office: DEPT OF COMMERCE NIST
General Information
Contract Opportunity Type: Special Notice (Original)
Original Published Date: Jul 30, 2025 04:01 pm EDT
Original Response Date: Aug 13, 2025 01:00 pm EDT
Inactive Policy: 15 days after response date
Original Inactive Date: Aug 28, 2025
Initiative: None

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 Tender Notice