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Open Request for Proposals with the Right Tender - 147555275

The JOINT STOCK COMPANY "RESEARCH INSTITUTE OF MOLECULAR ELECTRONICS" (TIN 7735579027) has issued a Tender notice for the procurement of a Open Request for Proposals with the Right to Conclude an Agreement to Carry out an Integral Part of the Research Work Modeling and Experimental Testing of the Design of a Plant For... in the Russia. This Tender notice was published on 20 Aug 2026 and is scheduled to close on 24 Aug 2026, with an estimated Tender value of Refer Document. Interested bidders can access detailed Tender information, eligibility criteria, and complete bidding documents by referencing TOT Ref No. 147555275, while the tender notice number is COM18082600007 and Registering on the platform.

Procurement Summary

Country: Russia

Summary: Open Request for Proposals with the Right to Conclude an Agreement to Carry out an Integral Part of the Research Work Modeling and Experimental Testing of the Design of a Plant For...

Deadline: 24 Aug 2026

Posting Date: 20 Aug 2026

Other Information

Notice Type: Tender

TOT Ref.No.: 147555275

Document Ref. No.: COM18082600007

Competition: ICB

Financier: Self Financed

Purchaser Ownership: Public

Tender Value: Refer Document

Purchaser's Detail

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Tender Details

Open request for proposals with the right to conclude an agreement to carry out an integral part of the research work Modeling and experimental testing of the design of an installation for growing SiGe layers using gas-phase epitaxy on silicon plates with a diameter of 200 mm, code Epitaxy-SiGe-SCh. Carrying out a component of the research work Modeling and experimental testing of the design of an installation for growing SiGe layers by gas-phase epitaxy on silicon wafers with a diameter of 200 mm, code Epitaxy-SiGe-SCh.
Publication of notice: 08/18/26 00:00 (MSK) Acceptance of applications: until 08.24.26 10:00 (Moscow time) Summing up: 09.24.26 10:00 (Moscow time) Name: Carrying out an integral part of the research work Modeling and experimental testing of the design installations for growing SiGe layers by gas-phase epitaxy on silicon wafers with a diameter of 200 mm, code Epitaxy-SiGe-SP.

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