Gallium Nitride Diode Wafer Fabrication Tender, USA - 124470600

Procurement Summary

Country: USA

Summary: Gallium Nitride Diode Wafer Fabrication

Deadline: 20 Aug 2025

Other Information

Notice Type: Tender

TOT Ref.No.: 124470600

Document Ref. No.: 80GRC025CA030

Financier: Self Financed

Purchaser Ownership: Public

Tender Value: Refer Document

Purchaser's Detail

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Tender Details

Description

NASA Glenn Research Center (GRC) has a requirement for a dedicated Gallium Nitride wafer fabrication run to provide 7000 high performance Schottky diodes for integration in high power Rectenna arrays operating at 10 GHz and above. These diodes must meet highly specific qualifications and produce cutting edge performance to enable high-frequency, high-power and high-efficiency power rectification. The device performance requirements outlined in the Statement of Work include global cut-off frequency, return loss, junction capacitance, operational power handling, current handling, and high-temperature operation. These devices must already exist in the vendors catalog and device measurements meeting the SOW requirements must be currently available or else it wouldn-t be possible to expect a competitor to deliver these devices with the stated performance within the required time frame.

NASA GRC intends to issue a sole source contract to acquire the related capabilities as outlined in the attached Statement of Work from Raytheon Advanced Technologies of Tewksbury, MA under the authority of FAR 6.302-1, only one responsible source and no other supplies or services will satisfy agency requirements.

The Government does intend to acquire a commercial product or commercial service using FAR Part 12.

Interested organizations may submit their capabilities and qualifications to perform the effort electronically via email to Ian Park (ian.park@nasa.gov) not later than 12:00pm ET on August 20, 2025. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether to conduct this acquisition on a competitive basis. A determination by the Government not to compete this acquisition on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the Government.

NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at : https:/...
Active Contract Opportunity
Notice ID : 80GRC025CA030
Related Notice
Department/Ind. Agency : NATIONAL AERONAUTICS AND SPACE ADMINISTRATION ::
General Information
Contract Opportunity Type: Special Notice (Updated)
Updated Published Date: Aug 13, 2025 10:19 am EDT
Original Published Date: Jun 27, 2025 04:21 pm EDT
Updated Response Date: Aug 20, 2025 12:00 pm EDT
Original Response Date: Jul 14, 2025 12:00 pm EDT
Inactive Policy: 15 days after response date
Updated Inactive Date: Sep 04, 2025
Original Inactive Date: Jul 29, 2025
Initiative: None

Classification
Original Set Aside: No Set aside used

Product Service Code: 5961 - SEMICONDUCTOR DEVICES AND ASSOCIATED HARDWARE
NAICS Code: 334413 - Semiconductor and Related Device Manufacturing

Place of Performance: Tewksbury, MA 01876 USA

Documents

 Tender Notice

Dedicated-Diode-Run-SOW_v3.pdf