Delivery of Two Identical Advanced Surface Grinding Systems Designed Specifically... Tender

INSTITUTE OF HIGH PRESSURES OF THE POLISH ACADEMY OF SCIENCES has floated a tender for Delivery of Two Identical Advanced Surface Grinding Systems Designed Specifically for Grinding Semiconductor Substrates, such as Gall Nitride (Gan) and Silicon Carbide (Sic).. The project location is Poland and the tender is closing on 14 Jul 2025. The tender notice number is 434580-2025, while the TOT Ref Number is 122074765. Bidders can have further information about the Tender and can request the complete Tender document by Registering on the site.

Expired Tender

Procurement Summary

Country : Poland

Summary : Delivery of Two Identical Advanced Surface Grinding Systems Designed Specifically for Grinding Semiconductor Substrates, such as Gall Nitride (Gan) and Silicon Carbide (Sic).

Deadline : 14 Jul 2025

Other Information

Notice Type : Tender

TOT Ref.No.: 122074765

Document Ref. No. : 434580-2025

Financier : Self Financed

Purchaser Ownership : Public

Tender Value : Refer Document

Purchaser's Detail

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Tender Details

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The subject of the order is "Delivery of two identical advanced surface grinding systems designed specifically for grinding semiconductor substrates, such as gall nitride (GAN) and silicon carbide (sic)."

Purchase of two identical grinder:

Requirements for the specifications of the grinders

• A grinder specially designed for grinding semiconductor wafers, such as gallium nitride (GAN) and silicon carbide (sic).

• Single -shaped grinding grinding grinder individually

• waffle processing with a diameter of 25 mm to 150 mm

• Possibility to use grinding discs from any supplier

Dimensions of the grinder:

• base area: less than: 1.5 m (width) x 2.2 m (main) x 2.5 m (height)

• Weight: less than: 5 tons

Grinding platform:

• spindle stiffness: at least 1 ym/500 n

• rated moment: 22 Nm

• Regulation slopes of the grinding shield in the axis with 3-point support

• feed speed: 5 mm/s

• Cutting: 0.01 (10.0) μm/s

• Resolution for axis with: 0.01 μm

Wafer thickness measurement:

• Real time thickness thickness measuring function

Work table:

• rotational speed: minimum 300 rpm

• Supported sizes of workpiece, available working tables:

0 25.4 mm

0 49 mm

0 50.8 mm

0 101.6 mm

• porous material: ceramics

Grinding shield:

• Diameter of the grinder: from 200 mm to 300 mm

• disc speed: minimum 2500 rpm

• Adjustable adjustment of the shield slope SZL ...
Document Type: Contract Notice
Reference number: ZP-271/03/2025
Contract Type: Supplyies
Authority Type: Body -pl
DOC TITLE: Delivery of two identical advanced surface grinding systems designed specifically for grinding semiconductor substrates such as gall nitride (GAN) and węglik krzemu (SiC).
Dispatch Date: 2025-07-03
Publish Date: 2025-07-04
Submission Date: 2025-07-14

Documents

 Tender Notice


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