Delivery of Two Identical Advanced Surface Grinding Systems Designed Specifically... Tender

INSTITUTE OF HIGH PRESSURES OF THE POLISH ACADEMY OF SCIENCES has floated a tender for Delivery of Two Identical Advanced Surface Grinding Systems Designed Specifically for Grinding Semiconductor Substrates, such as Gall Nitride (Gan) and Silicon Carbide (Sic).. The project location is Poland and the tender is closing on 07 Jul 2025. The tender notice number is 370169-2025, while the TOT Ref Number is 120605492. Bidders can have further information about the Tender and can request the complete Tender document by Registering on the site.

Expired Tender

Procurement Summary

Country : Poland

Summary : Delivery of Two Identical Advanced Surface Grinding Systems Designed Specifically for Grinding Semiconductor Substrates, such as Gall Nitride (Gan) and Silicon Carbide (Sic).

Deadline : 07 Jul 2025

Other Information

Notice Type : Tender

TOT Ref.No.: 120605492

Document Ref. No. : 370169-2025

Financier : Self Financed

Purchaser Ownership : Public

Tender Value : Refer Document

Purchaser's Detail

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Tender Details

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The subject of the order is "Delivery of two identical advanced surface grinding systems designed specifically for grinding semiconductor substrates, such as gallium nitride (GAN) and silicon carbide (sic)."

Purchase of two identicalgrinder:

Requirements for the specification of grinders

• grinder designed specifically for grinding semiconductor wafers, such as gallium nitride (GAN) and silicon carbide (sic).

• single -shaped grinder for processing waffles individually

• Possibility of processing waffles with a diameter from 25 mm to 150mm

• Possibility to use grinding discs from any supplier

Dimensions of the grinder:

• base area: less than: 1.5 m (width) x 2.2 m (depth) x 2.5 m (height)

• Weight: less than: 5 tons

sanding platform:

• spindle stiffness: at least 1 ym/500 n

• rated moment: 22 nm

• regulationsloping of the grinding disc in the axis with 3-point support

• feed speed: 5 mm/s

• cutting: 0.01 (10.0) μm/s

• resolution for the axis with: 0.01 μm

measuring the thickness of wafer:

• The measuring function of the thickness of the processed element in real time

working table:

• rotational speed: minimum 300 speed: rpmSupported sizes of workpiece, available working tables:

0 25.4 mm

0 49 mm

0 50.8 mm

0 101.6 mm

• porous material: Ceramics

grinding disc:



• Diameter of the grinding disc: from 200 mm to 300 mm

• rotational speed of the disc: minimum 2500 rpm.SZL ...
Document Type: Contract Notice

Reference Number: ZP-271/03/2025

Contract Type: Supplyies

Authority Type: Body-PL

doc Title: Delivery of two identical advanced sanding systems designed specifically designed for sanding semi-conductor substrates, such as gall nitride (gan)i węglik krzemu (SiC).

Dispatch Date: 2025-06-06

Publish Date: 2025-06-10

Submission Date: 2025-07-07

Documents

 Tender Notice


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