Delivery of Test Structures and Hemt Transistors Tender - 78846948

Procurement Summary

Country: Poland

Summary: Delivery of Test Structures and Hemt Transistors Based on Heterostructures Crystallized from Alscn/Gan and Algan/Gan by Movpe Method

Deadline: 14 Mar 2023

Posting Date: 15 Feb 2023

Other Information

Notice Type: Tender

TOT Ref.No.: 78846948

Document Ref. No.: 095399-2023

Competition: ICB

Financier: Self Financed

Purchaser Ownership: Public

Tender Value: Refer Document

CPV Classification

31712350 - Transistors

Purchaser's Detail

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Tender Details

The subject of the order are test structures and HEMT (high electron mobility transistors) based on heterostructures of scandium aluminum nitride and gallium nitride (AlScN/GaN) and aluminum gallium nitride and gallium nitride (AlGaN/GaN) obtained by epitaxy from the gas phase using metaloorganiki (z ang. metaloorganic vapor phase epitaxy; MOVPE).
Doc Title: Transistors
Contract Type: Supplies
Document Type : Contract notice

Reference Number : ZP-237/02/2023

Contract Type : Supplies

31712350 - Transistors

Authority Type : Other

Type of Procedure : Open procedure

Regulation : European Union, with participation by GPA countries

Bid Type : Submission for all lots

Doc Title : Transistors

Dispatch Date : 2023-02-10

Publish Date : 2023-02-15

Submission Date : 2023-03-14

Documents

 Tender Notice