Custom Silicon Carbide Transistors Tender in USA - 122911967

Procurement Summary

Country: USA

Summary: Custom Silicon Carbide Transistors

Deadline: 25 Jul 2025

Posting Date: 18 Jul 2025

Other Information

Notice Type: Tender

TOT Ref.No.: 122911967

Document Ref. No.: NIST-FY25-CHIPS-0095

Competition: ICB

Financier: Self Financed

Purchaser Ownership: Public

Tender Value: Refer Document

Purchaser's Detail

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Tender Details

Description
NIST-FY25-CHIPS-0095
6695 / 334516
Title: Custom Silicon Carbide Transistors
BACKGROUND
The National Institute of Standards and Technology (NIST) requires the design and fabrication of custom silicon carbide transistors on pre-diced 5 x 5 mm2 substrates. The substrates must be provided by NIST and will have an epitaxial layer with modified isotopic ratio. The transistors will be used to further our research of quantum-based magnetic field sensors with the goal of improving SWAP-C optimization of the technology for a variety of application spaces.
Minimum Requirements
The items shall meet or exceed the minimum requirements identified below. All items must be new. Used or remanufactured equipment will not be considered for award. Experimental, or prototype equipment will not be considered. The use of “gray market” components not authorized for sale in the U.S. by the proposer is not acceptable. All line items shall be shipped in the original manufacturer-s packaging and include all original documentation and software, when applicable. All specifications below must be verified at NIST before final acceptance.
The custom silicon carbide transistors will meet the minimum salient characteristics identified below.
Shall be fabricated using NIST-provided 5 x 5 mm2 substrates. All fabrication steps must accommodate the small sample size. Shall be designed with input from the NIST team; iterative design with layout drafts is required before fabrication. Shall be fabricated with steps that mimic an industrial process flow. The process used must be capable of producing functional metal-oxide-semiconductor field-effect transistors (MOSFETs) with measurable threshold voltage. The transistor gates must be able to withstand a voltage of 20 V for 10 minutes without catastrophic breakdown. The fabrication process must not damage or replace the isotopically-enriched epitaxial layer present on the NIST-provided substrates. Each 5 x 5 mm...
Active Contract Opportunity

Notice ID : NIST-FY25-CHIPS-0095

Related Notice

Department/Ind. Agency : COMMERCE, DEPARTMENT OF

Sub-tier : NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Office: DEPT OF COMMERCE NIST

General Information

Contract Opportunity Type: Sources Sought (Original)

Original Published Date: Jul 17, 2025 03:18 pm EDT

Original Response Date: Jul 25, 2025 05:00 pm EDT

Inactive Policy: 15 days after response date

Original Inactive Date: Aug 09, 2025

Initiative: None
Classification

Original Set Aside:

Product Service Code: 6695 - COMBINATION AND MISCELLANEOUS INSTRUMENTS

NAICS Code: 334516 - Analytical Laboratory Instrument Manufacturing
Place of Performance: Gaithersburg, MD 20899 USA

Documents

 Tender Notice