Available for Licensing Highquality Actinide Thin Tender - 139492423

Procurement Summary

Country: USA

Summary: Available for Licensing Highquality Actinide Thin Films Via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices

Deadline: 15 May 2026

Posting Date: 14 Apr 2026

Other Information

Notice Type: Tender

TOT Ref.No.: 139492423

Document Ref. No.: BA-1441

Competition: ICB

Financier: Self Financed

Purchaser Ownership: Public

Tender Value: Refer Document

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Tender Details

High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices
Description
Researchers at INL have developed a process to deposit high-quality epitaxial crystalline thin films of uranium and thorium, as well as their nitrides, using molecular beam epitaxy (MBE). MBE is a non-equilibrium vacuum deposition technique that provides precise control over the composition and interfaces of the material, making it ideal for fabricating high-purity, defect-free, single-crystalline thin films.
Actinide thin films, particularly those of uranium and thorium, present significant challenges for ab initio modeling due to their complex electron correlations. High-quality samples are essential for providing feedback to develop accurate models. Additionally, the strong electron correlations in actinide materials make them promising candidates for next-generation computing technologies.
By tuning the growth parameters, including temperature, pressure, growth rate, and flux ratios, researchers can controllably form high-quality actinide thin films. This technique also allows for seamless integration with existing semiconductor technology, facilitating the development of advanced device structures.
Key Benefits
High-Quality Thin Films: MBE enables the fabrication of high-purity, defect-free, single-crystalline thin films of uranium and thorium, as well as their nitrides.
Precise Control: The technique provides precise control over growth parameters, ensuring the formation of high-quality materials suitable for advanced applications.
Integration with Existing Technology: the ability to fabricate epitaxial films at wafer scale will facilitate seamless integration with existing semiconductor technology, making it suitable for the development of advanced electronic and computing devices.
Advanced Modeling Support: High-quality actinide thin films provide essential feedback for developing accurate ab initio models, fa...
Notice ID: ba-1441

Department/Ind. Agency: energy, department of

Sub-tier: energy, department of

Office: battelle energy alliance–doe cntr

Product Service Code: aj12 - general science and technology r&d services; general science and technology; applied research

NAICS Code: 334413 - Semiconductor and Related Device Manufacturing

Inactive Dates: may 30, 2026

Inactive Policy: 15 days after response date

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