Procurement Summary
Country : Spain
Summary : Acquisition of an Atomic Layer Deposit Equipment (Ald) of Aluminum Oxide, Titanium Oxide and Hafnium Oxide
Deadline : 16 Jun 2025
Other Information
Notice Type : Tender
TOT Ref.No.: 120184626
Document Ref. No. : 353456-2025
Financier : Self Financed
Purchaser Ownership : Public
Tender Value : EUR 450000
Purchaser's Detail
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The current ability to perform deposits of dielectric materials at the NTC Institute at micro/nanometric scale and wafer level is limited to chemical techniques in vapor phase (CVD). Improved steam deposit equipment is available with plasma which offer thin filmsAmorphous dielectric. The ALD process consists of the growth of a thin film by consecutive atomic layers. The fact of having an ALD team that in addition to increasing the manufacturing capacity, will offer uniformity and compliance of the film on any scale and would have a clearImpact on the quality of the research carried out as on the capabilities offered by the NTC Institute would be very high. ALD is the most advanced technique in thin film coating due to the precise control of the film thickness (NM) it offers. The films produced byThis technique is dense, without pores and without defects, and the conditions in which the process is carried out, 1-10 HPA 200-400C, are soft enough to be used with sensitive substrates. This type of process is also fundamental when working with external clients and supplyingQuality controls and technical specifications of manufactured devices. As the semiconductor industry continues to evolve, the increasingly fine size of the devices makes it especially important to find or develop more advanced techniques ofcre...
Document Type: Contract Notice
Reference Number: My25/Iutna/S/20
Contract Type: Supplies
Estimated Value: 450000-Eur
Authority Type: Body-Pl-RA Hafnio
Disco Oxide:2025-05-30
Publish Date: 2025-06-02
Submission Date: 2025-06-16
Documents
Tender Notice