4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC... Tender

Procurement Summary

Country : USA

Summary : 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers

Deadline : 29 Apr 2025

Other Information

Notice Type : Tender

TOT Ref.No.: 118167880

Document Ref. No. : 80GRC025R7012SS

Financier : Self Financed

Purchaser Ownership : Public

Tender Value : Refer Document

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Tender Details

Description

Amendment 1: Extending Sources Sought notice response deadline to 4/29/2025 at 5:00pm ET.

NASA Glenn Research (GRC) is hereby soliciting information from potential sources for fabrication of particular integrated SiC device structures (JFETs and resistors) via a particular fabrication process flow to the desired specifications on NASA-provided 100 mm diameter 4H-SiC epilayered wafers using NASA-provided device-layout design files.

The National Aeronautics and Space Administration (NASA) GRC is seeking capability statements from all interested parties for the purposes of determining the appropriate level of competition and/or small business subcontracting goals for 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers. The Government reserves the right to consider a Small, 8(a), Women-owned (WOSB), Service-Disabled Veteran (SD-VOSB), Economically Disadvantaged Women-owned Small Business (EDWOSB) or HUBZone business set-aside based on responses received.

NASA is seeking fabrication of specific integrated SiC device structures (JFETs and resistors) via a particular fabrication process flow designated as the “Gen. 12b” prototype wafer fabrication run to the following specifications on NASA-provided 100 mm diameter 4H-SiC epilayered wafers using NASA-provided device-layout design files. After the SiC device structures are completed, the wafers will be delivered back to NASA for additional processing of bond pads and the back-side contact that will complete the formation of integrated circuits needed for NASA missions. The resulting IC chips produced will be used to implement prototype extreme-environment electronic systems and demonstrations. A technical primer (overview) of the IC technology being implemented is online at https://www1.grc.nasa.gov/research-and-engineering/silicon-carbide-electronics-and-sensors/jfet-ic-tech-guide/ . The posted “IC. Gen. 12” mask layout design rules and related IC Gen. 12 do...
Active Contract Opportunity
Notice ID : 80GRC025R7012SS
Related Notice
Department/Ind. Agency : NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Sub-tier : NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Office: NASA GLENN RESEARCH CENTER
General Information
Contract Opportunity Type: Sources Sought (Updated)
Updated Published Date: Apr 23, 2025 09:32 am EDT
Original Published Date: Apr 11, 2025 08:03 am EDT
Updated Response Date: Apr 29, 2025 05:00 pm EDT
Original Response Date: Apr 21, 2025 05:00 pm EDT
Inactive Policy: 15 days after response date
Updated Inactive Date: May 14, 2025
Original Inactive Date: May 06, 2025
Initiative: None

Classification
Original Set Aside:

Product Service Code: AR11 - SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCH
NAICS Code: 541715 - Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology)

Place of Performance: USA

Documents

 Tender Notice