4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC... Tender

Procurement Summary

Country : USA

Summary : 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers

Deadline : 21 Apr 2025

Other Information

Notice Type : Tender

TOT Ref.No.: 117610410

Document Ref. No. : 80GRC025R7012SS

Financier : Self Financed

Purchaser Ownership : Public

Tender Value : Refer Document

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Tender Details

Description

NASA Glenn Research (GRC) is hereby soliciting information from potential sources for fabrication of particular integrated SiC device structures (JFETs and resistors) via a particular fabrication process flow to the desired specifications on NASA-provided 100 mm diameter 4H-SiC epilayered wafers using NASA-provided device-layout design files.

The National Aeronautics and Space Administration (NASA) GRC is seeking capability statements from all interested parties, including all socioeconomic categories of Small Businesses and Historically Black Colleges and Universities (HBCU)/Minority Institutions (MI) for the purposes of determining the appropriate level of competition and/or small business subcontracting goals for 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers. The Government reserves the right to consider a Small, 8(a), Women-owned (WOSB), Service-Disabled Veteran (SD-VOSB), Economically Disadvantaged Women-owned Small Business (EDWOSB) or HUBZone business set-aside based on responses received.

NASA is seeking fabrication of specific integrated SiC device structures (JFETs and resistors) via a particular fabrication process flow designated as the “Gen. 12b” prototype wafer fabrication run to the following specifications on NASA-provided 100 mm diameter 4H-SiC epilayered wafers using NASA-provided device-layout design files. After the SiC device structures are completed, the wafers will be delivered back to NASA for additional processing of bond pads and the back-side contact that will complete the formation of integrated circuits needed for NASA missions. The resulting IC chips produced will be used to implement prototype extreme-environment electronic systems and demonstrations. A technical primer (overview) of the IC technology being implemented is online at https://www1.grc.nasa.gov/research-and-engineering/silicon-carbide-electronics-and-sensors/jfet-ic-tech-guide/ . The posted “IC. Gen. 12” m...
Active Contract Opportunity
Notice ID : 80GRC025R7012SS
Related Notice
Department/Ind. Agency : NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Sub-tier : NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Office: NASA GLENN RESEARCH CENTER
General Information
Contract Opportunity Type: Sources Sought (Original)
Original Published Date: Apr 11, 2025 08:03 am EDT
Original Response Date: Apr 21, 2025 05:00 pm EDT
Inactive Policy: 15 days after response date
Original Inactive Date: May 06, 2025
Initiative: None

Classification
Original Set Aside:
Product Service Code: AR11 - SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCH
NAICS Code: 541715 - Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology)

Place of Performance: USA

Documents

 Tender Notice