10W Per Mm Class Thermally Enhanced High Efficiency Microwave Power Amplifiers Tender

Procurement Summary

Country : Netherlands

Summary : 10W Per Mm Class Thermally Enhanced High Efficiency Microwave Power Amplifiers

Deadline : 08 Apr 2024

Other Information

Notice Type : Tender

TOT Ref.No.: 96746582

Document Ref. No. : 1-11723

Competition : ICB

Financier : Agency for the Cooperation of Energy Regulators (ACER)

Purchaser Ownership : Public

Tender Value : Refer Document

Purchaser's Detail

Purchaser : EUROPEAN SPACE RESEARCH AND TECHNOLOGY CENTRE (ESTEC)
Keplerlaan 1, 2201 AZ Noordwijk, Netherlands Tel: +31-715656565
Netherlands

Tender Details

Tenders are invited for 10W Per Mm Class Thermally Enhanced High Efficiency Microwave Power Amplifiers (Artes 4.0 at 5c.491) (Re-Issue).

The objective of this activity is to design, manufacture and test a breadboard of a high-power amplifier in Ku-band or above with 10 W/mm class of power density in continuous wave operation. The selected manufacturing process will allow a smaller chip size with reduced junction temperature, reduced thermal memory effects and improved efficiency.Targeted Improvements:- 3-5 times improvementin power density.- Junction temperature reduction of ten degrees or more at the same power level.- Reduced chip size by half, allowing reduced parasitics, feed and combining losses.- Reduced dispersion and thermal memory effects for improved linearity.Description:There is a trend to use active antenna systems for High Throughput Satellite (HTS) systems employing solid state semiconductorhigh power amplifiers (HPA). Heat removal and thermal management is a significant challenge and driven by the power efficiency andmaximum allowable junction temperature of the HPA. Wide band gap semiconductors such as gallium nitride (GaN) are recognised as essential technology. Different substrate technologies are possible and, for example, today's GaN HEMT are fabricated using SiC substrates due to its higher thermal conductivity compared to Silicon. However, even when using SiC substrates, efficient heat removal is still driving the mass and size of the thermal management hardware required for an active antenna. Other semiconductor processes suchasGaN-on-Diamond technology are maturing and could enable a reduction of the device junction temperature by ten degreesor more dueto lower thermal resistance of the substrate material, whilst achieving the needed device power density. Additionally, thermal memory effects could be significantly reduced, helping to improve the linearity.This activity will design, manufacture and test a breadboard of a continuous wave 10 W/mm class high power amplifier in Ku-band or above based on a thermally enhanced substrate. Processing trials will be carried out to achieve state of the art RF performance with acceptable manufacturability and reliability.Procurement Policy: C(1) = Activity restricted to non-prime contractors (incl. SMEs).

Open Date: 09/02/2024 11:20 CET

Closing Date: 08/04/2024 13:00 CET

Documents

 Tender Notice